News: Microelectronics
27 August 2024
Scottsdale, Arizona-based onsemi, a smart energy and sensor technology company, has released its latest generation of hybrid silicon and silicon carbide (SiC) integrated power modules (PIMs) in an F5BP package for increasing the power output of utility-scale string solar inverters or energy storage systems (ESS).
Compared to previous generations, the modules offer higher power density and efficiency in the same footprint, which can increase the total system power of a solar inverter from 300 kW to 350 kW. This means that a 1 GW utility-scale solar farm using the latest generation modules can achieve energy savings of almost 2 MW per hour (equivalent to powering more than 700 homes per year). In addition, fewer modules are required to reach the same power threshold as the previous generation, which can reduce the cost of power equipment components by more than 25%.
As solar has achieved the lowest levelized cost of electricity (LCOE), it is increasingly becoming the preferred source of renewable energy generation worldwide, notes onsemi. To smooth out the volatility of solar power, utilities are also installing large-scale battery energy storage systems (BESS) to ensure a stable flow of energy to the grid. To support this combination of systems, manufacturers and utilities need solutions that provide maximum efficiency and reliable energy conversion. Every 0.1% improvement in efficiency can equate to a quarter of a million dollars in annual operating cost savings per gigawatt of installed capacity.
“As a variable energy source dependent on sunlight, continued progress in improving system performance, reliability and advanced storage solutions are required to maintain the stability and reliability of global grids during peak and off-peak periods,” said Sravan Vanaparthy, Vice President of the Industrial Power Division of the Power Solutions Group at onsemi. “More efficient infrastructure will increase adoption and ensure that as solar power generation expands, less energy is wasted and we move forward on the path away from fossil fuels.”
The new F5BP PIMs are integrated with a 1050V FS7 insulated gate bipolar transistor (IGBT) and the 1200V D3 EliteSiC diode, providing a foundation that facilitates high voltage and high current conversion while reducing power dissipation and increasing reliability. The FS7 IGBTs offer low turn-off losses and reduce switching losses by up to 8%, while the EliteSiC diodes are said to provide superior switching performance and 15% lower voltage flickering (VF) compared to previous generations.
The PIMs use a Type I neutral point terminal (INPC) for the inverter module and a flying capacitor topology for the boost module. The modules also use an optimized electrical layout and advanced direct-connected copper (DBC) substrates to reduce stray inductance and thermal resistance. In addition, a copper baseplate reduces the thermal resistance of the heat sink by a further 9.3%, ensuring that the module stays cool even under high operating loads. This thermal management is critical to maintaining the efficiency and longevity of the modules, making them effective for demanding applications that require reliable and sustained power.
onsemi launches EliteSiC M3e MOSFETs as next-generation silicon carbide technology platform
SiC power modules
www.onsemi.com
