Participants gathered for the SiC+X workshop.
The U of A Power Group is pleased to announce the successful completion of the eighth annual SiC+X Materials and Devices Workshop, held August 12-13. This year’s event brought together a dynamic mix of over 120 participants from various states and countries, underscoring the importance of the workshop as a global forum for cutting-edge research in silicon carbide (SiC) and wide bandgap materials. This represents a significant increase from last year’s event, which had approximately 60 participants registered, and underscores the growing interest and importance of this workshop in the area of silicon carbide and wide bandgap materials.
The workshop was led by Zhong Chen, associate professor of electrical engineering, along with Benoit Hamelin, workshop co-chair, Engenius Micro LLC; Philip Feng, engineering program chair, University of Florida; and C. Kavir Dass, engineering program co-chair, Air Force Research Laboratory. The workshop featured an impressive lineup of four keynote speakers and 31 invited speakers. These experts shared their latest findings and insights on a variety of topics, from innovative SiC material growth techniques to new applications in quantum technologies.
Highlights of this year’s workshop included an update and tour of the construction of the new multi-user silicon carbide research and manufacturing facility at the University of Arkansas. Set to become a cornerstone of SiC research, this facility generated great excitement among attendees who were excited to see how it will shape the future of this field.
The workshop began on August 11 with a networking dinner, where participants had the opportunity to make new contacts and renew old ones. This collaborative spirit carried over into the sessions and discussion rounds, where participants explored the frontiers of SiC technology and identified new avenues for research and development.
Participants praised the workshop for its comprehensive program and high-quality presentations. This event is a central meeting for the leading minds in SiC research and offers unprecedented opportunities for collaboration and knowledge sharing.
The U of A Power Group and the SiC+X Workshop Committee would like to express their deepest gratitude to all sponsors who made this conference possible:
- IEEE Society for Power Electronics
- Oxford Instruments
- Multi-user silicon carbide research and manufacturing facility
- Veeco
- Mitsuboshi Diamond Industrial Co. LTD.
- ASM
- Nissin ION Equipment
- Rigaku
- Micromachines
The U of A Power Group and the SiC+X Workshop Committee would also like to thank all the speakers, participants and organizers who contributed to the success of this workshop. We look forward to next year’s event, which promises to push the boundaries of silicon carbide and related technologies even further.
